Characterization And Testing Of Pt/TiO2/SiC Thin Film Layered Structure For Gas Sensing
Document Type
Article
Publication Date
9-2-2013
Publication Source
Thin Solid Films
Volume Number
542
First Page
404
Last Page
408
Publisher
Elsevier
ISSN
0040-6090
Abstract
This paper presents the results of our investigations on the gas sensing performance of Pt/TiO2/SiC based field effect devices. The current-voltage characteristics of these Pt/TiO2/SiC sensors at 530 degrees C showed a clear shift to lower voltages upon exposure to increasing hydrogen gas concentration. This indicates a reduction in the metal-oxide interface barrier height, arising from the flattening of the energy bands at the interface and can be attributed to the lowering of the Pt work function due to absorption of hydrogen. The effective change in barrier height Delta phi b for 1% hydrogen in air was found to be 125 meV. The thermal stability of the interfaces in the Pt/TiO2/SiC devices was studied by Rutherford backscattering spectrometry (RBS). The RBS spectra of the sample in as deposited and annealed conditions were compared and analyzed. The Pt/TiO2 and TiO2/SiC layers showed a sharp interface with minimal inter-diffusion. The film composition found to be stable even after repeated testing by exposing to analyte gases. This was further confirmed by X-ray photoelectron spectroscopy analysis of the samples. (C) 2013 The Authors. Published by Elsevier B.V. All rights reserved.
Keywords
Interface, Rutherford Backscattering Spectrometry, X-ray Photoelectron Spectroscopy, Gas Sensor, Silicon Carbide, Titanium Dioxide, Sputtering, Schottky Diode, Sensor, Hydrogen, Temperature, Tio2, Surface, H-2
Recommended Citation
Kandasamy, S., A. Trinchi, M. K. Ghantasala, Graham F. Peaslee, A. Holland, W. Wlodarski and E. Comini. "Characterization and Testing of Pt/Tio2/Sic Thin Film Layered Structure for Gas Sensing." Thin Solid Films 542, (2013): 404-408.
